Certainly, the IGBT is the choice for breakdown voltages above 1000 V, while the MOSFET is for device breakdown voltages below 250 V. Device selection isn't so clear, though, when the breakdown. As mentioned earlier an IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. Making Use of Gate Charge Information in MOSFET and IGBT Data Sheets Ralph McArthur Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, Oregon 97702 Power MOSFETs and IGBTs have established themselves as premier power semiconductors in a wide range of applications involving switching or amplification. Mosfet And IGBT Prominent & Leading Wholesale Distributor from Mumbai, we offer infineon igbt and mosfet, stm igbt and mosfet, nce power, wxdh mosfet and igbt, lrc mosfet & igbt and vishay mosfet. Infineon IGBT And Mosfet Product Price: Rs 25.00 / Piece Get Best Price.

In this article, we will discuss about compression of different Power Electronics Switches like; SCR (Silicon Controlled Rectifier), Power BJT (Bipolar Junction Transistor), Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and IGBT (Insulated Gate Bipolar Transistor).

Comparison of SCR, Power BJT, Power MOSFET, IGBT

Sr No

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ParameterSCRPower BJTPower MOSFET
1Operating frequency400 to 500 Hz10 kHz100 kHz10 kHz
2On-state voltage drop< 2 volts<2 volts4-5 volts3 volts
3Trigger circuitCurrent controlled need single pulse to turn-on.Current controlled needs continuous base drive.Voltage controlled needs continuous gate drive.Voltage controlled need continuous gate drive.
4SnubberNecessary (unpolarized)Necessary (polarized)Snubber can be eliminated. If used a polarized snubber is used.Snubber can be eliminated. If used a polarized snubber is used.
5ApplicationsDC motor drives, inverters, rectifiers.UPS, SMPS, Static VAR systems, AC motor control,AC motor control, SMPSSMPS, BLDC drives AC motor control UPS.
6Maximum VI Rating10 kV/ 5000 A2 kV/ 1000 A600 V/ 200 A1500 V/ 400 A
7Type of DeviceMinority carrierMinority carrierMajority carrierMinority carrier
8Voltage or Current ControlledCurrent controlledCurrent controlledVoltage controlledVoltage controlled
9Communication CircuitNecessaryNot NecessaryNot NecessaryNot Necessary
10Blocking CapacitySymmetricalAsymmetricalAsymmetricalAsymmetrical
11Temperature CoefficientNegativeNegativePositiveFlat
12Thermal RunawayPossiblePossibleNot PossibleNot Possible
13Parallel OperationExternal equalizing circuit is necessary.Equalizing circuit required.Easy to parallel.Easy to parallel.

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MOSFET vs IGBT difference between MOSFET and IGBT

This page compares MOSFET vs IGBT and mentions tabular difference between MOSFET and IGBT.MOSFET full form is Metal Oxide Semiconductor Field Effect Transistor and IGBT full form is Insulated Gate Bipolar Transistor.

What is MOSFET and its full form ?

Difference Between Mosfet And Igbt

There are two types of MOSFET viz. n-channel MOSFET and p-channel MOSFET.It can also be classified as Depletion MOSFET and Enhancement MOSFET.

The full form of MOSFET is Metal Oxide Semiconductor Field Effect Transistor.Figure-1 depicts 600 Volt SJ-MOSFET structure and circuit symbol.
Refer Depletion MOSFET vs Enhancement MOSFET➤ and MOSFET Fabrication Technology➤.

What is IGBT and its full form ?

The full form of IGBT is Insulated Gate Bipolar Transistor.Figure-2 depicts 600 Volt G6H Trench IGBT structure and circuit symbol.Both the structures look same, but the main difference in IGBT p-substrate is added below the n-substrate.

There are two IGBT structures viz. NPT-IGBT (known as homogeneous structure) andPT-IGBT (known as epitaxial structure).

The PT (i.e. punch through) IGBT structure shows characteristic epitaxial layers with an N+-doped region(i.e. buffer layer) and N--region on a p-doped substrate wafer.
The NPT (i.e. non punch through) IGBT structure is homogeneous N- -doped wafer.On backward side, a specially formed p-layer is created during wafer processing.

When one has to select between IGBT and MOSFET, IGBT is preferred for breakdown voltage greater than 1000Volt.MOSFET is preferred for breakdown voltages less than 250Volt.

Figure-3 mentions comparison of output characteristics between MOSFET and IGBT.Following table compares both MOSFET and IGBT.These factors will help one select the rightdevice based on application and design need.

Tabular difference between MOSFET and IGBT

Preferred device based onMOSFETIGBT
Based on conditions High Switching Frequency (> 100kHz) Low Switching Frequency (<20kHz)
Wide line and load conditions High Power levels (above say 3 kW)
dv/dt on the diode is limited High dv/dt needed to be handled by the diode
High light load efficiency is needed High full load Efficiency is needed
Based on applications Motor Drives (<250W) Motor Drives (> 250W)
Universal input AC-DC flyback and forward converter power supplies UPS and Welding H Bridge inverters
Low to Mid power PFCs (75W to 3 kW) High power PFCs (> 3kW)
Solar Micro Inverters High Power Solar/Wind Inverters (> 5kW)
Applications • SMPS (Hard switching greater than 200 KHz),
• SMPS (ZVS less than 1000 watts),
• Battery charging
• UPS(constant load, typically at low frequency),
• Welding(high average current, low frequency <50KHz, ZVS circuitry),
• Motor control(frequency <20KHz,short circuit/in-rush limit protection )
• Low power lighting(low frequency < 100 KHz)

Above mentioned difference between MOSFET and IGBT in tabular form is very useful to understand MOSFET vs IGBT difference.

MOSFET and BJT related links

PNP Transistor Vs NPN Transistor➤
Depletion MOSFET vs Enhancement MOSFET➤
MOSFET Fabrication Technology➤
MOSFET vs BJT-Difference between MOSFET and BJT➤
Application Note-MOSFET as switch and amplifier➤
Difference between NMOS vs PMOS➤

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