Certainly, the IGBT is the choice for breakdown voltages above 1000 V, while the MOSFET is for device breakdown voltages below 250 V. Device selection isn't so clear, though, when the breakdown. As mentioned earlier an IGBT is a fusion between a BJT and MOSFET. The symbol of the IGBT also represents the same, as you can see the input side represents a MOSFET with a Gate terminal and the output side represents a BJT with Collector and Emitter. Making Use of Gate Charge Information in MOSFET and IGBT Data Sheets Ralph McArthur Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, Oregon 97702 Power MOSFETs and IGBTs have established themselves as premier power semiconductors in a wide range of applications involving switching or amplification. Mosfet And IGBT Prominent & Leading Wholesale Distributor from Mumbai, we offer infineon igbt and mosfet, stm igbt and mosfet, nce power, wxdh mosfet and igbt, lrc mosfet & igbt and vishay mosfet. Infineon IGBT And Mosfet Product Price: Rs 25.00 / Piece Get Best Price.
In this article, we will discuss about compression of different Power Electronics Switches like; SCR (Silicon Controlled Rectifier), Power BJT (Bipolar Junction Transistor), Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and IGBT (Insulated Gate Bipolar Transistor).
Comparison of SCR, Power BJT, Power MOSFET, IGBT
Designed to satisfy your boldest dreams, our user-friendly, free logo creator makes it a snap for you to shape whatever picture you have in mind. Scroll through a plethora of unmatched templates and opt for the one that complies with your vision. Our logo maker is easy Start by entering your company name and industry, then select the perfect logo styles, colors, and symbols that you like the best. Looka Logo Maker will use these as inspiration and start to generate custom logo designs. Brand new logo maker. Logo Maker will help you find the perfect font, icons, and color schemes for your personal or business logo. Select a template you like the most using our unique design wizard, and our software will do the rest, narrowing down thousands of design options and presenting you with the ones best suited to you. Over 20 million businesses have used our Logo Maker to design a logo. Here’s why you should too. WIth our logo design software, you can create, change, and save as many logos as you like. Once you’ve got the design just right, purchase your logo for just $39.95. Instantly download your. Canva’s logo maker and editor is made for non-designers: Simply drag and drop. When you’re finished, you can download your new logo—or print it on business cards, letterheads and more. The options are endless. How to make a logo.
|Parameter||SCR||Power BJT||Power MOSFET|
|1||Operating frequency||400 to 500 Hz||10 kHz||100 kHz||10 kHz|
|2||On-state voltage drop||< 2 volts||<2 volts||4-5 volts||3 volts|
|3||Trigger circuit||Current controlled need single pulse to turn-on.||Current controlled needs continuous base drive.||Voltage controlled needs continuous gate drive.||Voltage controlled need continuous gate drive.|
|4||Snubber||Necessary (unpolarized)||Necessary (polarized)||Snubber can be eliminated. If used a polarized snubber is used.||Snubber can be eliminated. If used a polarized snubber is used.|
|5||Applications||DC motor drives, inverters, rectifiers.||UPS, SMPS, Static VAR systems, AC motor control,||AC motor control, SMPS||SMPS, BLDC drives AC motor control UPS.|
|6||Maximum VI Rating||10 kV/ 5000 A||2 kV/ 1000 A||600 V/ 200 A||1500 V/ 400 A|
|7||Type of Device||Minority carrier||Minority carrier||Majority carrier||Minority carrier|
|8||Voltage or Current Controlled||Current controlled||Current controlled||Voltage controlled||Voltage controlled|
|9||Communication Circuit||Necessary||Not Necessary||Not Necessary||Not Necessary|
|12||Thermal Runaway||Possible||Possible||Not Possible||Not Possible|
|13||Parallel Operation||External equalizing circuit is necessary.||Equalizing circuit required.||Easy to parallel.||Easy to parallel.|
8,618 total views, 21 views today
MOSFET vs IGBT difference between MOSFET and IGBT
This page compares MOSFET vs IGBT and mentions tabular difference between MOSFET and IGBT.MOSFET full form is Metal Oxide Semiconductor Field Effect Transistor and IGBT full form is Insulated Gate Bipolar Transistor.
What is MOSFET and its full form ?
Difference Between Mosfet And Igbt
There are two types of MOSFET viz. n-channel MOSFET and p-channel MOSFET.It can also be classified as Depletion MOSFET and Enhancement MOSFET.
The full form of MOSFET is Metal Oxide Semiconductor Field Effect Transistor.Figure-1 depicts 600 Volt SJ-MOSFET structure and circuit symbol.
Refer Depletion MOSFET vs Enhancement MOSFET➤ and MOSFET Fabrication Technology➤.
What is IGBT and its full form ?
The full form of IGBT is Insulated Gate Bipolar Transistor.Figure-2 depicts 600 Volt G6H Trench IGBT structure and circuit symbol.Both the structures look same, but the main difference in IGBT p-substrate is added below the n-substrate.
There are two IGBT structures viz. NPT-IGBT (known as homogeneous structure) andPT-IGBT (known as epitaxial structure).
The PT (i.e. punch through) IGBT structure shows characteristic epitaxial layers with an N+-doped region(i.e. buffer layer) and N--region on a p-doped substrate wafer.
The NPT (i.e. non punch through) IGBT structure is homogeneous N- -doped wafer.On backward side, a specially formed p-layer is created during wafer processing.
When one has to select between IGBT and MOSFET, IGBT is preferred for breakdown voltage greater than 1000Volt.MOSFET is preferred for breakdown voltages less than 250Volt.
Figure-3 mentions comparison of output characteristics between MOSFET and IGBT.Following table compares both MOSFET and IGBT.These factors will help one select the rightdevice based on application and design need.
Tabular difference between MOSFET and IGBT
|Preferred device based on||MOSFET||IGBT|
|Based on conditions||High Switching Frequency (> 100kHz)||Low Switching Frequency (<20kHz)|
|Wide line and load conditions||High Power levels (above say 3 kW)|
|dv/dt on the diode is limited||High dv/dt needed to be handled by the diode|
|High light load efficiency is needed||High full load Efficiency is needed|
|Based on applications||Motor Drives (<250W)||Motor Drives (> 250W)|
|Universal input AC-DC flyback and forward converter power supplies||UPS and Welding H Bridge inverters|
|Low to Mid power PFCs (75W to 3 kW)||High power PFCs (> 3kW)|
|Solar Micro Inverters||High Power Solar/Wind Inverters (> 5kW)|
|Applications||• SMPS (Hard switching greater than 200 KHz), |
• SMPS (ZVS less than 1000 watts),
• Battery charging
| • UPS(constant load, typically at low frequency), |
• Welding(high average current, low frequency <50KHz, ZVS circuitry),
• Motor control(frequency <20KHz,short circuit/in-rush limit protection )
• Low power lighting(low frequency < 100 KHz)
Above mentioned difference between MOSFET and IGBT in tabular form is very useful to understand MOSFET vs IGBT difference.
MOSFET and BJT related links
PNP Transistor Vs NPN Transistor➤
BJT vs FET➤
JUGFET vs MOSFET➤
Depletion MOSFET vs Enhancement MOSFET➤
MOSFET Fabrication Technology➤
MOSFET vs BJT-Difference between MOSFET and BJT➤
Application Note-MOSFET as switch and amplifier➤
Difference between NMOS vs PMOS➤
What is Difference between
difference between FDM and OFDM
Difference between SC-FDMA and OFDM
Difference between SISO and MIMO
Difference between TDD and FDD
Difference between 802.11 standards viz.11-a,11-b,11-g and 11-n
OFDM vs OFDMA
CDMA vs GSM